Fabrication of 3D packaging TSV using DRIE

DTIP of MEMS and MOEMS - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

Volumn , Issue , 2008, Pages 109-114

  Puech, M ^a   Thevenoud, J M ^a   Gruffat, J M ^a   Launay, N ^a   Arnal, N ^a   Godinat, P ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

Bosch process; DRIE; Oxide etching; Packaging; PECVD; Silicon etching; Tapered profile; TSV; Via first; Via last

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIES; IMAGE SENSORS; MEMS; MICROELECTROMECHANICAL DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

BOSCH PROCESS; DRIE; OXIDE ETCHING; PECVD; SILICON ETCHING; TAPERED PROFILE; TSV; VIA FIRST; VIA LAST;

THREE DIMENSIONAL;

EID: 62249173701     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DTIP.2008.4752963     Document Type: Conference Paper

References (3)

1. Emc3d consortium, www.EMC3D.org.
2. Laermer R, Schilp A., "Me thod of Anisotropically Etching Si" US patent 5,501,893.
3. rd 2003.