Low temperature PECVD of dielectric films for TSV applications

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 764-768

  Archard, D ^a   Giles, K ^a   Price, A ^a   Burgess, S ^a   Buchanan, K ^a  

^a SPTS UK ^*  (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BLANKET FILMS; DEPOSITION TEMPERATURES; ELECTRICAL BREAKDOWN; ELECTRICAL CHARACTERISTIC; ELECTRICAL LEAKAGE; ELECTRICAL PERFORMANCE; HIGH ASPECT RATIO; LOW TEMPERATURES; STEP COVERAGE; TEST STRUCTURE;

DIELECTRIC FILMS; ELECTRIC FIELDS; SILICON COMPOUNDS;

ASPECT RATIO;

EID: 77955215798     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490746     Document Type: Conference Paper

References (7)

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