High mobility oxide semiconductor TFT for circuit integration of AM-OLED

IDW'10 - Proceedings of the 17th International Display Workshops

Volumn 2, Issue , 2010, Pages 631-634

  Fukumoto, Eri ^a   Arai, Toshiaki ^a   Morosawa, Narihiro ^a   Tokunaga, Kazuhiko ^a   Terai, Yasuhiro ^a   Fujimori, Takashige ^a   Sasaoka, Tatsuya ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AM-OLED; CHANNEL MATERIALS; CIRCUIT INTEGRATION; HIGH MOBILITY; HIGH RELIABILITY; OXIDE SEMICONDUCTOR; THRESHOLD VOLTAGE SHIFTS;

THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 79956310516     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. Sakata, et al., "Development of 4.0-in. AMOLED Display with Driver Circuit using Amorphous In-Ga-Zn-Oxide TFTs", IDW '09, p.689 (2009).
2. K. Nomura, et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature 432, 488 (2004).
3. J. K. Jeong, et al., "12.1-inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array", SID'08 Digest, p.1 (2008).
4. T. Arai, et al., "Highly Reliable Oxide-Semiconductor TFT for AM-OLED Display", SID'10 Digest, p.1033 (2010).
5. M. K. Ryu, et al., "High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach", APPLIED PHYSISC LETTERS 95, 072104 (2009).
6. K. H. Lee, et al., "The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O then film transistors", APPLIED PHYSICS LETTERS 95, 232106 (2009).