Anisotropic lithium insertion behavior in silicon nanowires: Binding energy, diffusion barrier, and strain effect

Journal of Physical Chemistry C

Volumn 115, Issue 19, 2011, Pages 9376-9381

  Zhang, Qianfan ^a   Cui, Yi ^b   Wang, Enge ^a,c  

^a INSTITUTE OF PHYSICS   (China)

^b Stanford University   (United States)

^c PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; ATOMIC CONFIGURATION; AXIAL DIRECTION; AXIAL ORIENTATIONS; CRYSTALLOGRAPHIC DIRECTIONS; DIFFUSION PATHWAYS; EXTERNAL STRAINS; HIGH CAPACITY; LITHIUM BATTERY ANODE; LITHIUM INSERTION; LONG AXIS; SILICON NANOWIRES; STRAIN EFFECT; UNI-AXIAL STRAINS;

BINDING ENERGY; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; FILM GROWTH; LITHIUM; NANOWIRES; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS;

DIFFUSION BARRIERS;

EID: 79956123681     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1115977     Document Type: Article

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