|
Volumn 80, Issue 21, 2002, Pages 3934-3936
|
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
a a a a a a b b c d |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING TEMPERATURES;
GALLIUM ANTIMONIDE;
HALL MEASUREMENTS;
ISOCHRONAL ANNEALING;
P-TYPE;
P-TYPE CONDUCTION;
POSITRON LIFETIME;
POSITRON LIFETIME SPECTROSCOPY;
RESIDUAL ACCEPTORS;
ANNEALING;
DEFECTS;
ELECTRONS;
HOLE CONCENTRATION;
PHOTOLUMINESCENCE;
POSITRON ANNIHILATION SPECTROSCOPY;
POSITRONS;
GALLIUM;
|
EID: 79956058713
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1482419 Document Type: Article |
Times cited : (23)
|
References (13)
|