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Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 423-428

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

(8) Mui, W K a Lui, M K a Ling, C C a Beling, C D a Fung, S a Cheah, K W b Li, K F b Zhao, Y W c

a UNIVERSITY OF HONG KONG (Hong Kong)

b HONG KONG BAPTIST UNIVERSITY (Hong Kong)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

POSITRON LIFETIME SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036058213 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.