Growth and characterization of GaInNxAs1-x thin films with band-gap energies in the red-blue portion of the visible spectrum

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1900-1902

  Cardona Bedoya, Jairo A ^a   Gordillo Delgado, Fernando ^a   Zelaya Angel, Orlando ^a   Cruz Orea, Alfredo ^a   Mendoza Álvarez, Julio G ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; DIFFRACTION BANDS; DIFFRACTION PEAKS; GLASS SUBSTRATES; GROWTH PARAMETERS; HEXAGONAL GAN; PHOTOACOUSTIC TECHNIQUES; RADIO-FREQUENCY SPUTTERING; RF-POWER; RF-SPUTTERING; ROOM TEMPERATURE; SEMICONDUCTOR FILMS; SMALL GRAIN SIZE; SPECTROSCOPY MEASUREMENTS; VISIBLE SPECTRA; X-RAY DIFFRACTOGRAMS;

DIFFRACTION; GALLIUM NITRIDE; NITROGEN PLASMA; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

VAPOR DEPOSITION;

EID: 79956054425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454209     Document Type: Article

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