Influence of electron injection on performance of GaN photodetectors

Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 926-928

  Chernyak, Leonid ^a   Schulte, Alfons ^a   Osinsky, Andrei ^b   Graff, John ^c   Schubert, E Fred ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Applied Technologies ^*  (United States)

^c Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; FORWARD BIAS; INJECTED ELECTRONS; MINORITY CARRIER DIFFUSION LENGTH; P-N JUNCTION; PEAK RESPONSIVITY; PHOTORESPONSES; SPECTRAL BROADENING;

GALLIUM NITRIDE; SEMICONDUCTOR JUNCTIONS;

ELECTRON INJECTION;

EID: 79956021163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1448382     Document Type: Article

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