Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 499-503

  Linder, K K ^a   Zhang, F C ^a   Rieh, J S ^a   Bhattacharya, P ^a  

^a University of Michigan   (United States)

Author keywords

DLTS; LT Si buffer; TEM; Threading dislocation density

Indexed keywords

DISLOCATIONS (CRYSTALS); HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

HALL MEASUREMENTS; THREADING DISLOCATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031143962     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01004-4     Document Type: Article

References (20)

1. K. Ismail, S.F. Nelson, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 63 (1993) 660.
2. K. Ismail, J.O. Chu and B.S. Meyerson, Appl. Phys. Lett. 64 (1994) 3124.
3. A. Pruijmboom, J.W. Slotboom, D.J. Gravesteijn, C.W. Fredriksz, A.A. van Gorkum, R.A. van de Heuvel, J.M.L. van Rooij-Mulder, G. Streutker and G.F.A. van de Walle, Electron. Dev. Lett. 12 (1991) 357.
4. K.D. Hobart, F.J. Kub, N.A. Papanicoloau, W. Kruppa and P.E. Thompson, J. Crystal Growth 157 (1995) 2115.
5. K. Ismail, B.S. Meyerson and P.J. Wang, Appl. Phys. Lett. 58 (1991) 2117.
6. K. Ismail, F.K. LeGoues, K.L. Saenger, M. Arafa, J.O. Chu, P.M. Mooney and B.S. Meyerson, Phys. Rev. Lett. 73 (1994) 3447.
7. P.M. Mooney, J.L. Jordan-Sweet, J.O. Chu and F.K. LeGoues, Appl. Phys. Lett. 66 (1995) 3642.
8. M.A. Lutz, R.M. Feenstra, F.K. LeGoues, P.M. Mooney and J.O. Chu, Appl. Phys. Lett. 66 (1995) 724.
9. J.H. Li, V. Holy, G. Bauer, J.F. Nützel and G. Abstreiter, Appl. Phys. Lett. 67 (1995) 789.
10. F.K. LeGoues, B.S. Meyerson and J.F. Morar, Phys. Rev. Lett. 66 (1991) 2903.
11. R. Hull, J.C. Bean, R.E. Leibenguth and D.J. Werder, J. Appl. Phys. 65 (1989) 4723.
12. G. Kissinger, T. Morgenstern, G. Morgenstern and H. Richter, Appl. Phys. Lett. 66 (1995) 2083.
13. F.K. LeGoues, Phys. Rev. Lett. 72 (1994) 876.
14. J. M. Hinckley, PhD Thesis, University of Michigan, Ann Arbor, 1990.
15. E. Kasper, H.-J. Herzog and H. Kibbel, Appl. Phys. 8 (1975) 199.
16. J. Welser, J.L. Hoyt and J.F. Gibbons, Electron. Dev. Lett. 15 (1994) 100.
17. H. Chen, L.W. Guo, Q. Cui, Q. Hu, Q. Huang and J.M. Zhou, J. Appl. Phys. 79 (1996) 1167.
18. J.M. Fernandez, J. Chen and H.H. Weider, J. Vac. Sci. Technol. A11 (1993) 889.
19. S.D. Kim, J.A. Trezza and J.S. Harris, J. Vac. Sci. Technol. B 13 (1996) 1526.
20. E. Scheid, L.K. Kouassi, R. Henda, J. Samitier and J.R. Morante, Mater. Sci. Eng. B 17 (1993) 185.