Transmission electron microscopy study by chemical delineation in Si devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 6 A, 2000, Pages 3330-3333

  Back, Tae Sun ^a   Yang, Jun Mo ^a   Park, Tae Soo ^a   Kim, Ho Joung ^a   Lee, Soun Young ^a   Lee, Seung Chul ^a   Choi, Jae Hoon ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Chemical delineation; Junction profile; Metastable polysilicon; Si device; SiO2 Si3N4 SiO2 dielectric film; Transmission electron microscopy

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; DIELECTRIC FILMS; MORPHOLOGY; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL DELINEATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0034205782     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3330     Document Type: Article

References (6)

1. T. T. Sheng and R. B. Marcus: J. Electrochem. Soc. 128 (1981) 881.
2. R. B. Marcus and T. T. Sheng: Transmission Electron Microscopy of Silicon VLSI Circuits and Structures (Wiley-Interscience, New York, 1983) Chap. 5.
3. C. Spinella, V. Raineri, F. La Via and S. U. Campisano: J. Vac. Sci. Technol. B 14 (1996) 414.
4. S. S. Neogi, D. Venables, Z. Na and D. M. Maher: J. Vac. Sci. Technol. B 16 (1998) 471.
5. Y. Kunimune, N. Nishio, N. Kodama, H. Kikuchi, T. Toda, A. Mineji, S. Shishiguchi and S. Saito: Jpn. J. Appl. Phys. 38 (1999) 2314.
6. D. R. Turner: J. Electrochem. Soc. 107 (1960) 810.