Epitaxial growth of TaN thin films on Si(100) and Si(111) using a TiN buffer layer

Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2323-2325

  Wang, H ^a   Tiwari, Ashutosh ^a   Kvit, A ^a   Zhang, X ^a   Narayan, J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOMAIN MATCHING EPITAXY; HIGH QUALITY; LATTICE MATCHING; ROOM TEMPERATURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI (1 1 1); SI(1 0 0); SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; TEMPERATURE COEFFICIENT OF RESISTIVITY; TIN BUFFER LAYERS;

BUFFER LAYERS; DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SODIUM CHLORIDE; STOICHIOMETRY; TANTALUM COMPOUNDS; TINNING; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956025644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1466522     Document Type: Article

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