Periodic oxide breakdown during oxidation of AlN/Sapphire(0001) films

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1364-1366

  Kang, H C ^a   Seo, S H ^a   Kim, J W ^a   Noh, D Y ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; BRAGG REFLECTION; BREAK DOWN; EPITAXIAL ALN; IN-SITU SYNCHROTRONS; INTENSITY FRINGES; INTERFACIAL MOTIONS; OXIDATION BEHAVIORS; OXIDATION RATES; OXIDE BREAKDOWN; THERMAL OXIDATION;

EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; LASER OPTICS; OXIDE FILMS;

OXIDATION;

EID: 79956004707     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1453486     Document Type: Article

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