Low-temperature breakdown properties of AlxGa1-xAs avalanche photodiodes

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1908-1910

  Ma, Feng ^a   Karve, Gauri ^a   Zheng, Xiaoguang ^a   Sun, Xiaoguang ^a   Holmes Jr , Archie L ^a   Campbell, Joe C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY SCATTERING; BREAKDOWN ELECTRIC FIELD STRENGTH; BREAKDOWN FIELD; BREAKDOWN PROPERTY; CARRIER SCATTERING; EXPERIMENTAL DATA; HIGHER TEMPERATURES; HOMOJUNCTION; LOW TEMPERATURES; MONTE CARLO MODEL; PHONON EMISSIONS; RATE OF CHANGE; TEMPERATURE RANGE;

ALUMINUM; AVALANCHE PHOTODIODES; ELECTRIC FIELDS; ELECTRIC PROPERTIES;

GALLIUM;

EID: 79956004691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506012     Document Type: Article

References (18)

1. M. Wintrebert-Fouquet and B. Orsal, J. Appl. Phys. 85, 1211 (1999). jap JAPIAU 0021-8979
2. F. J. DiSalvo, Science 285, 703 (1999). sci SCIEAS 0036-8075
3. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1985).
4. J. P. R. David, R. Ghin, S. A. Plimmer, G. J. Rees, and R. Grey, in Proceedings of the Third European Conference on High Temperature Electronics, Berlin, 4-7 July 1999 (Abingdon, UK, 1999), p. 187.
5. C. Yeh and S. N. Shabde, Solid-State Electron. 14, 557 (1971). sel SSELA5 0038-1101
6. X. G. Zheng, P. Yuan, X. Sun, G. S. Kinsey, A. L. Holmes, B. G. Streetman, and J. C. Campbell, IEEE J. Quantum Electron. 36, 1168 (2000). ejq IEJQA7 0018-9197
7. X. G. Zheng, X. Sun, S. Wang, P. Yuan, G. S. Kinsey, A. L. Holmes, Jr., B. G. Streetman, and J. C. Campbell, Appl. Phys. Lett. 78, 3833 (2001). apl APPLAB 0003-6951
8. C. H. Tan, J. P. R. David, S. A. Plimmer, G. J. Rees, R. C. Tozer, and R. Grey, IEEE Trans. Electron Devices 48, 1310 (2001). etd IETDAI 0018-9383
9. J. Allam, Jpn. J. Appl. Phys., Part 1 36, 1529 (1997). jjb JAPNDE 0021-4922
10. F. Capasso, R. E. Nahory, and M. A. Pollack, Solid-State Electron. 22, 977 (1979). sel SSELA5 0038-1101
11. J. R. Hauser, M. A. Littlejohn, and T. H. Glisson, Appl. Phys. Lett. 28, 458 (1976). apl APPLAB 0003-6951
12. A. K. Saxena, Phys. Rev. B 24, 3295 (1981). prb PRBMDO 0163-1829
13. L. Pavesi and M. Guzzi, J. Appl. Phys. 75, 4779 (1994). jap JAPIAU 0021-8979
14. M. V. Fischetti, IEEE Trans. Electron Devices 38, 634 (1991). etd IETDAI 0018-9383
15. F. Osaka and T. Mikawa, J. Appl. Phys. 58, 4426 (1985). jap JAPIAU 0021-8979
16. M. Ershov and V. Ryzhii, Semicond. Sci. Technol. 10, 138 (1995). sst SSTEET 0268-1242
17. L. V. Keldysh, Sov. Phys. JETP 10, 509 (1960). spj SPHJAR 0038-5646
18. S. A. Plimmer, J. P. R. David, D. S. Ong, and K. F. Li, IEEE Trans. Electron Devices 46, 769 (1999). etd IETDAI 0018-9383