Realization and properties of MgB2 metal-masked ion damage junctions

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3600-3602

  Kang, D J ^a   Peng, N H ^b   Webb, R ^b   Jeynes, C ^b   Yun, J H ^c   Moon, S H ^c   Oh, B ^c   Burnell, G ^d   Tarte, E J ^d   Moore, D F ^d   Blamire, M G ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c LG Electronics Inc   (South Korea)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AC JOSEPHSON EFFECT; BEAM DAMAGE; DIRECT MILLING; EXPERIMENTAL EVIDENCE; HIGH-DENSITY INTEGRATION; ION DAMAGE; JOSEPHSON JUNCTIONS; NANO SCALE;

ION BEAMS; IONS; JOSEPHSON JUNCTION DEVICES; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955985645     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519965     Document Type: Article

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