Realization and properties of YBa2Cu3O 7-δ Josephson junctions by metal masked ion damage technique

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 814-816

  Kang, D J ^a   Burnell, G ^a   Lloyd, S J ^a   Speaks, R S ^a   Peng, N H ^b   Jeynes, C ^b   Webb, R ^b   Yun, J H ^c   Moon, S H ^c   Oh, B ^c   Tarte, E J ^d   Moore, D F ^d   Blamire, M G ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c LG Electronics Inc   (South Korea)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AC JOSEPHSON EFFECT; FOCUSED ION BEAM MILLING; HIGH-DENSITY INTEGRATION; HIGH-T; ION DAMAGE; JOSEPHSON JUNCTIONS; TEMPERATURE RANGE;

ION IMPLANTATION; IONS; JOSEPHSON JUNCTION DEVICES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956023631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1446998     Document Type: Article

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