Effects of SiC nanodispersion on the thermoelectric properties of p-type and n-Type Bi 2Te 3-based alloys

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 992-998

  Liu, Da Wei ^a   Li, Jing Feng ^a   Chen, Chen ^a,b   Zhang, Bo Ping ^b  

^a TSINGHUA UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Bismuth telluride; nanodispersion; silicon carbide; thermoelectric

Indexed keywords

ALLOY MATRIX; BISMUTH TELLURIDE; DEVICE RELIABILITY; DIMENSIONLESS FIGURE OF MERIT; ELECTRICAL RESISTIVITY; N-TYPE MATERIALS; NANO-DISPERSIONS; P-TYPE; POLYCRYSTALLINE; POWER FACTORS; SIC NANOPARTICLES; THERMOELECTRIC; THERMOELECTRIC PROPERTIES;

ALLOYS; BISMUTH; CERIUM ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; MECHANICAL ALLOYING; MECHANICAL PROPERTIES; METALLIC MATRIX COMPOSITES; NANOPARTICLES; SPARK PLASMA SINTERING;

SILICON CARBIDE;

EID: 79955897170     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1476-x     Document Type: Conference Paper

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