The effects of disorder and interactions on the Anderson transition in doped graphene

Journal of Physics Condensed Matter

Volumn 23, Issue 20, 2011, Pages

  Song, Yun ^a   Song, Hongkang ^a   Feng, Shiping ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON LOCALIZATION; ANDERSON METAL-INSULATOR TRANSITION; ANDERSON TRANSITION; DENSITY OF STATE; DISORDER STRENGTH; HONEYCOMB LATTICES; IMPURITY CONCENTRATION; NUMERICAL STUDIES; PARTICIPATION RATIOS; QUENCHED RANDOM DISORDERS; SCALING BEHAVIOR; SCREENING EFFECT;

GRAPHENE; HONEYCOMB STRUCTURES; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

EID: 79955888178     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/20/205501     Document Type: Article

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