Promoted growth of Bi single-crystalline nanowires by sidewall-induced compressive stress in on-film formation of nanowires

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 3, 2011, Pages 2047-2051

  Kim, Hyunsu ^a   Noht, Jin Seo ^a   Ham, Jinhee ^a   Lee, Wooyoung ^a  

^a Yonsei University   (South Korea)

Author keywords

Bi nanowires; Compressive stress; On film formation of nanowires; Sidewall

Indexed keywords

BI FILMS; BI NANOWIRES; DRIVING FORCES; FABRICATE PATTERNS; NANOWIRE GROWTH; PATTERN SIZE; REACTIVE ION; SI (100) SUBSTRATE; SIDEWALL; SIDEWALL EFFECTS; SINGLE-CRYSTALLINE; SUBSTRATE STRUCTURE; THERMALLY OXIDIZED;

COMPRESSIVE STRESS; FILM GROWTH; PHOTOLITHOGRAPHY; SILICON COMPOUNDS; SUBSTRATES;

NANOWIRES;

BISMUTH; NANOMATERIAL; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; COMPRESSIVE STRENGTH; CONFORMATION; CRYSTALLIZATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

BISMUTH; COMPRESSIVE STRENGTH; CRYSTALLIZATION; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 79955855559     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.3129     Document Type: Conference Paper

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