The structural and electrical studies on the Boron-doped SnO2 films deposited by spray pyrolysis

Vacuum

Volumn 85, Issue 11, 2011, Pages 986-989

  Zhang, B ^a,b   Tian, Y ^b   Zhang, J X ^a,b   Cai, W ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

BTO; FTIR; Scattering mechanism; Structural

Indexed keywords

BORON CONCENTRATIONS; BORON IONS; BORON-DOPED; BTO; ELECTRICAL STUDIES; FREE ELECTRON; FREE PATH; FTIR; GRAIN SIZE; INTERSTITIAL SITES; PREFERRED ORIENTATIONS; SCATTERING MECHANISM; SCATTERING MECHANISMS; SOLUTION PROCESS; STRUCTURAL; TIN IONS; XRD;

BORON; CARRIER CONCENTRATION; IONS; SCATTERING; TIN;

SPRAY PYROLYSIS;

EID: 79955851751     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.02.005     Document Type: Article

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