Characterization of SnO2, in2O3, and ITO films prepared by thermal oxidation of DC-sputtered Sn, in and In-Sn films

Vacuum

Volumn 76, Issue 2-3, 2004, Pages 177-180

  Valenzuela Jauregui J J ^a   Quintero Gonzalez R ^a   Hernandez Torres J ^a   Mendoza Galvan A ^a   Ramirez Bon R ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Metal layers; Sputtering; Thermal oxidation; Transparent conductive oxides

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; GLASS; SPUTTERING; SUBSTRATES; THERMAL EFFECTS; THERMOOXIDATION; X RAY DIFFRACTION;

EVAPORATED METAL LAYERS; METAL LAYERS; TRANSPARENT CONDUCTIVE OXIDES; TRANSPARENT CONDUCTIVE OXIDES (TCO);

METALLIC FILMS;

EID: 7044254713     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.07.008     Document Type: Conference Paper

References (7)

1. Ginley DS, Bright C. Mater Res Soc Bull 2000;25:15-8.
2. Granqvist CG, Hultaker A. Thin Solid Films 2002;411:1-5.
3. Herrero J, Guillen C. Vacuum 2002;67:611-6.
4. Park SK, Han JI, Kim WK, Kwak MG. Thin Solid Films 2001;379:49-55.
5. Manno D, Micocci G, Serra A, Di Giulio M, Tepore A. J Appl Phys 2000;88:6571-7.
6. Girtan M, Rusu GI, Rusu GG, Gurlui S. Appl Surf Sci 2000;162-163:492-8.
7. Sasi B, Gopchandran KG, Manj PK, Koshy P, PRao PP, Vaidyan VK Vacuum 2003;68:149-54.