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Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Memory characteristics of InAs quantum dots embedded in GaAs quantum well

(3) Kannan, E S a Kim, Gil Ho a Ritchie, D A b

a Sungkyunkwan University (South Korea)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CLOCKWISE HYSTERESIS LOOP; COULOMBIC INTERACTIONS; CURRENT-VOLTAGE MEASUREMENTS; GAAS QUANTUM WELLS; GATE BIAS; INAS; INAS QUANTUM DOTS; MEMORY DEVICE; ORDERS OF MAGNITUDE; PHONON ASSISTED; QUANTUM DOTS; TRAPPED ELECTRONS;

CHARGE TRAPPING; ELECTRON GAS; ELECTRONS; GALLIUM ALLOYS; HYSTERESIS; INDIUM ARSENIDE; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL ELECTRON GAS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70349900269 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3242347 Document Type: Article

Times cited : (20)

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