Influences of doping and annealing conditions on the photoluminescence from In2O3 nanocrystals and Eu3+ ions co-doped sol-gel SiO2 films

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Lin, Tao ^a   Ding, Xue Yun ^a   Xu, Jun ^a   Wan, Neng ^a   Xu, Ling ^a   Chen, Kun Ji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ANNEALED SAMPLES; ANNEALING CONDITION; CHARACTERISTIC EMISSION; CO-DOPED; EFFECTIVE ABSORPTION; ENERGY TRANSFER PROCESS; EU DOPING; HIGH TEMPERATURE; HYDROXYL GROUPS; MATRIX FREE; ORDERS OF MAGNITUDE; PHOTOLUMINESCENCE PROPERTIES; SOL-GEL METHODS; UNIFORM DISTRIBUTION;

ANNEALING; ENERGY TRANSFER; GELS; INDIUM; IONS; MULTIPHOTON PROCESSES; NANOCRYSTALS; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EUROPIUM;

EID: 79955712431     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569889     Document Type: Article

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