Preparation and luminescence of nano-sized In2O3 and rare-earth co-doped SiO2 thin films

Nanotechnology

Volumn 19, Issue 9, 2008, Pages

  Wan, Neng ^a   Lin, Tao ^a   Xu, Jun ^a,b   Xu, Ling ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); LUMINESCENCE; NANOPARTICLES; RARE EARTH COMPOUNDS; SILICA; SOL-GEL PROCESS;

ANNEALING TEMPERATURE; EMISSION BANDS; LUMINESCENCE INTENSITY; PARTICLE DENSITY;

THIN FILMS;

EUROPIUM; INDIUM; INDIUM OXIDE; LANTHANIDE; NANOMATERIAL; NANOPARTICLE; SILICON DIOXIDE;

ANALYTIC METHOD; ARTICLE; CONCENTRATION (PARAMETERS); ENERGY TRANSFER; FILM; LUMINESCENCE; NANOANALYSIS; NONHUMAN; PARTICLE DENSITY; PARTICLE SIZE; PHASE TRANSITION; PRIORITY JOURNAL; ROOM TEMPERATURE; SOL GEL METHOD; STRUCTURE ANALYSIS; SURFACE PROPERTY; X RAY DIFFRACTION;

EID: 42549148901     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/9/095709     Document Type: Article

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