Preparation and properties of Bi0.5Na0.5TiO 3 thin films by chemical solution deposition

Ferroelectrics

Volumn 405, Issue 1, 2010, Pages 204-210

  Maiwa, Hiroshi ^a   Kogure, Tomonori ^a   Sakamoto, Wataru ^b   Hayashi, Takashi ^a  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL COMPOSITIONS; CHEMICAL SOLUTION DEPOSITION; FIELD-INDUCED DISPLACEMENT; FILM CAPACITORS; HEATING CONDITIONS; METAL ALKOXIDES; POLARIZATION HYSTERESIS LOOPS; PREPARATION AND PROPERTIES; ROOM TEMPERATURE; SI SUBSTRATES; SINGLE-PHASE THIN FILMS; STABLE PRECURSORS; STRAIN LOOPS; TIO;

BISMUTH; CAPACITORS; CHEMICALS; DEPOSITION; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; PEROVSKITE; SCANNING PROBE MICROSCOPY; SILICON COMPOUNDS; SODIUM; THIN FILMS; VAPOR DEPOSITION;

FILM PREPARATION;

EID: 79955684874     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2010.483201     Document Type: Conference Paper

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