Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

Chinese Physics B

Volumn 20, Issue 3, 2011, Pages

  Liu, Xue Chao ^a   Chen, Zhi Zhan ^a   Shi, Er Wei ^a   Liao, Da Qian ^b   Zhou, Ke Jin ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

(Ga, Co) codoped ZnO; anomalous Hall effect; diluted magnetic semiconductors; mag netroresisance

Indexed keywords

ANOMALOUS HALL EFFECT; ANOMALOUS HALL EFFECTS; AS-GROWN THIN FILMS; CO-DOPED ZNO; CONCENTRATION-DEPENDENT; DILUTED MAGNETIC SEMICONDUCTORS; MAG-NETRORESISANCE; MAGNETOTRANSPORTS; PHYSICAL VAPOUR DEPOSITION; POSITIVE MAGNETORESISTANCE; ROOM TEMPERATURE; ROOM-TEMPERATURE FERROMAGNETISM; X RAY ABSORPTION FINE STRUCTURES; ZNO;

CARRIER CONCENTRATION; COBALT; DEPOSITION; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; GYRATORS; HALL EFFECT; INDUCTIVELY COUPLED PLASMA; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; METALLIC FILMS; OPTICAL FILMS; PLASMA DEPOSITION; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

FERROMAGNETISM;

EID: 79955684829     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/3/037501     Document Type: Article

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