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Volumn 405, Issue 1, 2010, Pages 262-267
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Influence of epitaxial growth orientation on residual strain and dielectric properties of (Ba0.3Sr0.7)TiO3 films grown on in-plane compressive substrates
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Author keywords
Epitaxial films; Ferroelectrics; Growth orientation; Phase transition; Strain
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Indexed keywords
CURIE-WEISS TEMPERATURE;
FERROELECTRICS;
GROWTH ORIENTATION;
GROWTH ORIENTATIONS;
IN-PLANE;
IN-PLANE COMPRESSIVE STRAIN;
ORIENTATION DEPENDENCE;
RESIDUAL STRAINS;
RF-MAGNETRON SPUTTERING;
SRTIO;
TIO;
BARIUM;
EPITAXIAL GROWTH;
FERROELECTRICITY;
MAGNETRON SPUTTERING;
METALLORGANIC VAPOR PHASE EPITAXY;
PHASE TRANSITIONS;
SUBSTRATES;
EPITAXIAL FILMS;
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EID: 79955684422
PISSN: 00150193
EISSN: 15635112
Source Type: Journal
DOI: 10.1080/00150193.2010.483391 Document Type: Conference Paper |
Times cited : (4)
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References (6)
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