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Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7088-7091

Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory

(4) Wang, Jianfeng a Song, Zhongxiao a Xu, Kewei a Liu, Ming b

a XI'AN JIAOTONG UNIVERSITY (China)

b INSTITUTE OF MICROELECTRONICS (China)

Author keywords

PtIZnO Pt; Rectifying effect; Resistive random access memory (ReRAM); Structure

Indexed keywords

AMORPHOUS ZNO; BOTTOM ELECTRODES; CHEMICAL BONDING STATE; CROSS-POINT ARRAY; ELECTRICAL BEHAVIORS; ELECTRICAL SWITCHING; ELECTRONS FLOW; FABRICATED DEVICE; HIGH-DENSITY INTEGRATION; HIGH-RESISTANCE STATE; KEITHLEY; LOW-RESISTANCE STATE; MEMORY CELL; PTIZNO/PT; RADIO FREQUENCY MAGNETRON SPUTTERING; RECTIFYING EFFECT; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; ROOM TEMPERATURE; SEMICONDUCTOR CHARACTERIZATION; STRUCTURE; STRUCTURE-BASED; SWITCHING CHARACTERISTICS; ZNO; ZNO FILMS;

AMORPHOUS FILMS; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DISTILLATION; METALLIC FILMS; PLATINUM; RANDOM ACCESS STORAGE; SEMICONDUCTOR DEVICES; SWITCHING; SWITCHING SYSTEMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CRYSTAL STRUCTURE;

EID: 79955533999 PISSN: 15334880 EISSN: None Source Type: Journal
DOI: 10.1166/jnn.2010.2758 Document Type: Conference Paper

Times cited : (14)

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