Carrier distribution and dynamics of nanocrystal solids doped with artificial atoms

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1842-1847

  Ko, Dong Kyun ^a   Urban, Jeffrey J ^b   Murray, Christopher B ^a,c  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Artificial atoms; Carrier transport; Doping; Electrical conductivity; Nanocrystal solids; Thermoelectricity

Indexed keywords

ARTIFICIAL ATOMS; BUILDING BLOCKES; BULK SEMICONDUCTORS; CARRIER DISTRIBUTIONS; COLLECTIVE PROPERTIES; CONDENSED MATTER; CURRENT THEORIES; DOPING; DOPING EFFECTS; ELECTRICAL CONDUCTIVITY; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ELECTRONIC SPECTROSCOPY; MACROSCOPIC MEASUREMENTS; MULTICOMPONENTS; NC SYSTEM; NEW FORMS; QUANTUM FEATURES; SINGLE COMPONENTS; TEMPERATURE DEPENDENT; THERMOPOWER MEASUREMENTS; TRANSPORT BEHAVIOR;

ATOMS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC STRUCTURE; NANOCRYSTALS; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES;

CARRIER MOBILITY;

NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

ELECTRON TRANSPORT; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE;

EID: 77952332672     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100571m     Document Type: Article

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