A novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 2, 2011, Pages

  Chang, Sheng Po ^a   Lu, Chien Yuan ^a   Chang, Shoou Jinn ^a   Chiou, Yu Zung ^b   Hsu, Cheng Liang ^c   Su, Peng Yu ^a   Hsueh, Ting Jen ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD BIAS; HETEROSTRUCTURES; NANOSHELLS; P-N DIODE; RECTIFYING BEHAVIORS; SPACE-CHARGE-LIMITED CURRENT; VOLTAGE CHARACTERISTICS; ZNO; ZNO NANOWIRES;

DISTILLATION; HETEROJUNCTIONS; NANOWIRES; SEMICONDUCTOR DIODES;

ZINC OXIDE;

EID: 79955165538     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01AJ05     Document Type: Conference Paper

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