Investigated optical and elastic properties of Porous silicon: Theoretical study

Materials and Design

Volumn 32, Issue 7, 2011, Pages 4088-4093

  Al Douri, Y ^a   Ahmed, N M ^b   Bouarissa, N ^c   Bouhemadou, A ^d,e  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

^c KING KHALID UNIVERSITY   (Saudi Arabia)

^d FERHAT ABBAS UNIVERSITY   (Algeria)

^e KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MODULUS; ELASTIC PROPERTIES; EMPIRICAL PSEUDOPOTENTIAL METHOD; LAME'S CONSTANT; OPTICAL DIELECTRIC CONSTANT; POISSON'S RATIO; SHEAR MODULUS; SHORT-RANGE FORCES; SOUND VELOCITIES; THEORETICAL STUDY; YOUNG'S MODULUS;

DEBYE TEMPERATURE; ELASTIC MODULI; ELASTICITY; ORGANIC POLYMERS; POISSON RATIO; REFRACTIVE INDEX;

POROUS SILICON;

EID: 79955138207     PISSN: 02641275     EISSN: 18734197     Source Type: Journal    
DOI: 10.1016/j.matdes.2011.03.010     Document Type: Article

References (54)

1. Sun C.Q., Sun X.W., Tay B.K., Lau S.P., Huang H., Li S. Dielectric suppression and its effect on photoabsorption of nanometric semiconductors. J Phys D 2001, 34:2359-2362.
2. Pan L.K., Huang H.T., Sun C.Q. Dielectric relaxation and transition of porous silicon. J Appl Phys 2003, 94:2695-2700.
3. Pan L.K., Sun C.Q. Coordination imperfection enhanced electron-phonon interaction. J Appl Phys 2004, 95:3819-3821.
4. Pan L.K., Ee Y.K., Sun C.Q., Yu G.Q., Zhang Q.Y., Tay B.K. Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination. J Vac Sci Technol B 2004, 22:583-587.
5. Li Y.Y., Cunin F., Link J.R., Gao T., Betts R.E., Reiver S.H., et al. Polymer replicas of photonic porous silicon for sensing and drug delivery applications. Science 2003, 299:2045-2047.
6. Canham L.T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett 1990, 57:1046-1048.
7. Hybersen M.S. Absorption and emission of light in nanoscale silicon structures. Phys Rev Lett 1994, 72:1514-1517.
8. 4 and CO. Mater Res Soc Symp Proc 1993, 283:197.
9. Balagurov L.A., Yarkin D.G., Petrova E.A., Orlov A.F., Andrushin Ya S. Highly sensitive porous silicon based photodiode structures. J Appl Phys 1997, 82:4647-4650.
10. Dimitrov D.B. Current-voltage characteristics of porous-silicon layers. Phys Rev B 1995, 51:1562-1566.
11. Deresmes D., Marisael V., Stievenard D., Ortega C. Electrical behavior of aluminium-porous silicon junctions. Thin Solid Films 1995, 255:258-261.
12. Chen Z., Lee T.Y., Bosman G. Electrical characterization and modeling of wide band gap porous silicon p-n diodes. J Appl Phys 1994, 76:2499-2504.
13. Timoshenko V.Y., Kashkarov P.K., Matveeva A.B., Konstantinova E.A., Flietner H., Dittrich Th. Influence of photoluminescence and trapping on the photovoltage at the por-Si/p-Si structure. Thin Solid Films 1996, 276:216-218.
14. Pan L.K., Sun C.Q., Li C.M. Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon. Appl Surf Sci 2005, 240:19-23.
15. Milani S.h.D., Dariani R.S., Mortezaali A., Daadmehr V., Robbie K. The correlation of morphology and surface resistance in porous silicon. J Optoelectron Adv Mater 2006, 8:1216-1220.
16. Cicek K., Celik M. Selection of porous materials in marine system design: the case of heat exchanger aboard ships. Mater Des 2009, 30:4260-4266.
17. Edwards K.L. Designing of engineering components for optimal materials and manufacturing process utilisation. Mater Des 2003, 24:355-366.
18. Amen R., Vomacka P. Case-based reasoning as a tool for materials selection. Mater Des 2001, 22:353-358.
19. Tsidilkovski I.M. Band structure of semiconductors 1982, Pergamon Press, Oxford.
20. Humphreys R.G., Rossler V., Cardona M. Indirect exciton fine structure in GaP and the effect of uniaxial stress. Phys Rev B 1978, 18:5590-5605.
21. Kobayasi T., Nara H. Properties of nonlocal pseudopotential of Si and Ge optimized under full interdependence among potential parameters. Bull Coll Med Sci, Tohoku Univ 1993, 2:7-16.
22. Vogl P. Dynamical effective charges in semiconductors: a pseudopotential approach. J Phys C 1978, 11:251.
23. Cohen M.L., Bergstresser T.K. Band structures and pseudopotential form factors for fourteen semiconductors of the diamond and zinc-blende structures. Phys Rev 1966, 141:789-796.
24. Ravindra N.M., Ganapathy P., Choi J. Energy gap-refractive index relations in semiconductors - an overview. Infrared Phys Technol 2007, 50:21-29.
25. Moss T.S. A relationship between the refractive index and the infra-red threshold of sensitivity for photoconductors. Proc Phys Soc B 1950, 63:167.
26. Gupta V.P., Ravindra N.M. Comments on the moss formula. Phys Status Solidi B 1980, 100:715-719.
27. Ruoff A.L. Pressure dependence of the refractive index of diamond, cubic silicon carbide and cubic boron nitride. Mater Res Soc Symp Proc 1984, 22:287.
28. Reddy R.R., Anjaneyulu S., Samara C.L.N. Relationship between energy gap, refractive index, bond energy and the szigeti charge in polyatomic binary compounds and semiconductors. J Phys Chem Solid 1993, 54:635-637.
29. Herve P., Vandamme L.K.J. General relation between refractive index and energy gap in semiconductors. Infrared Phys Technol 1993, 35:609-615.
30. Ravindra N.M., Auluck S., Srivastava V.K. On the penn gap in semiconductors. Phys Status Solidi B 1979, 93:K155-K160.
31. Herve P.J.L., Vandamme L.K.J. Empirical temperature dependence of the refractive index of semiconductors. J Appl Phys 1995, 77:5476-5477.
32. Ghosh D.K., Samanta L.K., Bhar G.C. A simple model for evaluation of refractive indices of some binary and ternary mixed crystals. Infrared Phys 1984, 24:43-47.
33. Penn D.R. Wave-number-dependent dielectric functions of semiconductors. Phys Rev 1962, 128:2093-2097.
34. Van Vechten J.A. Quantum dielectric theory of electronegativity in covalent systems. I. Electronic dielectric constant. Phys Rev 1969, 182:891-905.
35. Aspnes D.E., Theeten J.B. Spectroscopic analysis of the interface between Si and its thermally grown oxide. J Electrochem Soc 1980, 127:1359-1365.
36. Palik E.D. Handbook of optical constants of solids 1985, Academic Press, Boston.
37. Gray P.R., Hurst P.J., Lewis S.H., Meyer R.G. Analysis and design of analog integrated circuits 2009, Wiley, New York.
38. Samara G.A. Temperature and pressure dependences of the dielectric constants of semiconductors. Phys Rev B 1983, 27:3494-3505.
39. Al-Douri Y., Abid H., Aourag H. Calculation of bulk moduli of semiconductor compounds. Physica B 2002, 322:179-182.
40. Cohen M.L. Calculation of bulk moduli of diamond and zinc-blende solids. Phys Rev B 1985, 32:7988-7991.
41. Lam P.K., Cohen M.L., Martinez G. Analytic relation between bulk moduli and lattice constants. Phys Rev B 1987, 35:9190-9194.
42. Al-Douri Y., Abid H., Aourag H. Correlation between the bulk modulus and the charge density in semiconductors. Physica B 2001, 305:186-190.
43. Martin R.M. Elastic properties of ZnS structure semiconductors. Phys Rev B 1970, 1:4005-4011.
44. 1-x. Mater Chem Phys 2006, 100:41-47.
45. Baranowski J.M. Bond lengths, force constants and local impurity distortions in semiconductors. J Phys C 1984, 17:6287.
46. 1-y/InAs. Physica B 2002, 322:193-200.
47. Anderson O.L. A simplified method for calculating the Debye temperature from elastic constants. J Phys Chem Solids 1963, 24:909-917.
48. Wortman J.J., Evans R.A. Young's modulus, shear modulus, and Poisson's ratio in silicon and germanium. J Appl Phys 1965, 36:153-156.
49. Christmas U.M.E., Faux D.A., Cowern N.E.B. Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal. Phys Rev B 2007, 76:205205-205210.
50. McSkimin H.J. Measurement of elastic constants at low temperatures by means of ultrasonic waves-data for silicon and germanium single crystals, and for fused silica. J Appl Phys 1953, 24:988-997.
51. Morin F.J., Maita J.P. Electrical properties of silicon containing arsenic and boron. Phys Rev 1954, 96:28-35.
52. Montagna M., Dusi R. Raman scattering from small spherical particles. Phys Rev B 1995, 52:10080-10089.
53. Moatadid A., Vaissiere J.C., Nougier J.P. Effect of the degeneracy on the transport of hot holes in silicon. Solid-State Electron 1989, 32:1895-1899.
54. Schroeder D.V. An introduction to thermal physics 2000, Addison-Wesley, San Francisco.