SiC JFETs for power module applications

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1167-1170

  Hilsenbeck, Jochen ^a   Xi, Zhang ^b   Domes, Daniel ^b   Rüschenschmidt, Kathrin ^a   Treu, Michael ^a   Rupp, Roland ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

4H SiC power device; Cascode; Efficiency; Gate resistor; JFET; Power module; Switching losses

Indexed keywords

EFFICIENCY; ELECTRIC POWER SYSTEMS; JUNCTION GATE FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES;

CASCODE; GATE RESISTORS; POWER DEVICES; POWER MODULE; SWITCHING LOSS;

SILICON CARBIDE;

EID: 77955433610     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1167     Document Type: Conference Paper

References (4)

1. F. Björk, J. Hancock, R. Rupp and G. Deboy: Power Electronics Europe Magazine, issue 3 (April 2009).
2. M. Treu, R. Rupp, P. Blaschitz, K. Rüschenschmidt, Th. Sekinger, P. Friedrichs, R. Elpelt and D. Peters: Proc. IAS (2007), published on CD.
3. T. Schütze: IPOSIM user manual www.infineon.com.
4. Datasheet of Infineon Technologies power module FP25R12W2T4: www.infineon.com.