Silicon carbide diodes performance characterization and comparison with silicon devices

1st International Energy Conversion Engineering Conference IECEC

Volumn , Issue , 2003, Pages

  Lebron Velilla, Ramon C ^a   Schwarze, Gene E ^a   Trapp, Scott ^b  

^a NASA GLENN RESEARCH CENTER   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ENERGY CONVERSION; GALLIUM ARSENIDE; RATING; SCHOTTKY BARRIER DIODES; SILICON; TRANSIENT ANALYSIS;

COMPARISON PARAMETERS; FORWARD VOLTAGE DROPS; PERFORMANCE CHARACTERIZATION; REVERSE RECOVERY CURRENT; SILICON CARBIDE DIODE; SILICON CARBIDE SCHOTTKY DIODES; STEADY STATE CHARACTERISTICS; SWITCHING TRANSIENT;

SILICON CARBIDE;

EID: 84896049737     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Shenai, R. Scott, and B.J. Baliga, "Optimum Materials for High Power Electronics," IEEE Transactions on Electron Devices, vol. 36, no.9, pp.1811-1823, 1989.
2. J. Millman, A. Grabel, Microelectronics. Second Edition. McGraw-Hill Book Company, 1987.
3. K. Walters, B. Werner, "Introduction to Schottky Rectifiers," Microsemi Application Notes, Micro Notes Series 401.
4. C. Miesner, R. Rupp, H. Kapels, M. Krach, I. Zverev, "ThinQ! Silicon Carbide Schottky Diodes: An SMPS Circuit Designer's Dream Comes True!" Infineon Technologies Application Notes Technical White Paper.
5. K. Shenai, P.G. Neudeck, "Defect Engineering and Reliability Study of SiC High Power Devices," Space Solar Power Exploratory Research and Technology Program Report. November 2000.