Vanadium dioxide thin film with low phase transition temperature deposited on borosilicate glass substrate

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4246-4248

  Huang, Zhangli ^a   Chen, Sihai ^a   Wang, Boqing ^a   Huang, Ying ^a   Liu, Nengfu ^a   Xu, Jin ^a   Lai, Jianjun ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Borosilicate glass substrate; Phase transition; Switch efficiency; Vanadium dioxide thin film

Indexed keywords

ATOMIC FORCE; AVERAGE HEIGHT; BOROSILICATE GLASS SUBSTRATES; CRITICAL TRANSITION TEMPERATURES; GRAIN SIZE; INFRARED LIGHT; LOW-TO-HIGH; METAL INSULATOR TRANSITION TEMPERATURE; NANO-STRUCTURED; PHASE TRANSITION TEMPERATURES; REACTIVE ION BEAM SPUTTERING; SMART WINDOWS; SWITCHING EFFICIENCY; SWITCHING PROPERTIES; THERMAL-ANNEALING; VANADIUM DIOXIDE; VANADIUM DIOXIDE THIN FILM; VANADIUM DIOXIDE THIN FILMS;

ATOMIC FORCE MICROSCOPY; CRYSTALLITE SIZE; GLASS TRANSITION; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SUBSTRATES; TEMPERATURE; THIN FILMS; VANADIUM; VANADIUM ALLOYS;

BOROSILICATE GLASS;

EID: 79954426742     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.394     Document Type: Article

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