Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near-to mid-IR for photonic applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7919, Issue , 2011, Pages

  Garnache, A ^a   Laurain, A ^a   Myara, M ^a   Perez, J P ^a   Cerutti, L ^a   Michon, A ^b   Beaudoin, G ^b   Sagnes, I ^b   Cermak, P ^c   Romanini, D ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIV PARIS SUD   (France)

^c LIPHY   (France)

Author keywords

High power; Low noise; Quantum well; Single frequency; VECSEL

Indexed keywords

CUTOFF FREQUENCY; DIFFRACTION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SHOT NOISE; SILICON CARBIDE; SILICON COMPOUNDS;

HIGH POWER; HIGH-POWER DIODE-PUMPING; LOW NOISE; RELAXATION OSCILLATION; SIDE MODE SUPPRESSION RATIOS; SINGLE FREQUENCY; SINGLE FREQUENCY OPERATION; VECSEL;

SURFACE EMITTING LASERS;

EID: 79953823075     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.876369     Document Type: Conference Paper

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