메뉴 건너뛰기




Volumn 60, Issue 5, 2011, Pages 1761-1767

A novel measurement method to determine the C-V characteristic of a solar photovoltaic cell

Author keywords

Built in potential; C V characteristics; doping concentration; negative resistance; R V characteristics; solar photovoltaic (SPV) cells

Indexed keywords

BUILT-IN POTENTIAL; C-V CHARACTERISTICS; DOPING CONCENTRATION; R-V CHARACTERISTICS; SOLAR PHOTOVOLTAICS;

EID: 79953799735     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2010.2091183     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 1
    • 34047186632 scopus 로고    scopus 로고
    • Influence of the parasitic solar array capacitance to the sequential switching shunt series regulator
    • Malaga, Spain, May 16-19
    • A. Carrigos, J. M. Blanes, J. A. Carrasco, and J. B. Ejea, "Influence of the parasitic solar array capacitance to the sequential switching shunt series regulator," in Proc. IEEE Mediterranean Electro Tech. Conf., Malaga, Spain, May 16-19, 2006, pp. 1196-1201.
    • (2006) Proc. IEEE Mediterranean Electro Tech. Conf. , pp. 1196-1201
    • Carrigos, A.1    Blanes, J.M.2    Carrasco, J.A.3    Ejea, J.B.4
  • 2
    • 33644895388 scopus 로고    scopus 로고
    • Effect of solar array capacitance on the performance of switching shunt voltage regulator
    • DOI 10.1109/TPEL.2005.869779
    • Anilkumar, M. S. Suresh, and J. Nagaraju, "Effect of solar array capacitance on the performance of switching shunt voltage regulator," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 543-548, Mar. 2006. (Pubitemid 43380104)
    • (2006) IEEE Transactions on Power Electronics , vol.21 , Issue.2 , pp. 543-548
    • Kumar, R.A.1    Suresh, M.S.2    Nagaraju, J.3
  • 3
    • 1542366619 scopus 로고    scopus 로고
    • Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films
    • Feb.
    • C. Agashe, O. Kluth, J. Hupkes, U. Zastrow, B. Rech, and M.Wuttig, "Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films," J. Appl. Phys., vol. 95, no. 4, pp. 1911-1917, Feb. 2004.
    • (2004) J. Appl. Phys. , vol.95 , Issue.4 , pp. 1911-1917
    • Agashe, C.1    Kluth, O.2    Hupkes, J.3    Zastrow, U.4    Rech, B.5    Wuttig, M.6
  • 4
    • 0023401499 scopus 로고
    • The Schottky-gated hall-effect transistor and its application to carrier concentration and mobility profiling in GaAs MESFETs
    • Aug.
    • C. W. Farely and B. G. Streetman, "The Schottky-gated hall-effect transistor and its application to carrier concentration and mobility profiling in GaAs MESFETs," IEEE Trans. Electron Devices, vol. ED-34, no. 8, pp. 1781-1787, Aug. 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.8 , pp. 1781-1787
    • Farely, C.W.1    Streetman, B.G.2
  • 5
    • 33244474412 scopus 로고    scopus 로고
    • Application of junction capacitance measurements to the characterization of solar cells
    • DOI 10.1109/TED.2006.870846
    • F. Recart and A. Cuevas, "Application of junction capacitance measurements to the characterization of solar cells," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 442-448, Mar. 2006. (Pubitemid 43280596)
    • (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.3 , pp. 442-448
    • Recart, F.1    Cuevas, A.2
  • 6
    • 0025383837 scopus 로고
    • Interpretation of thin-film polycrystalline solar cell capacitance
    • Feb.
    • P. H. Mauk, H. Tarakolian, and J. R. Sites, "Interpretation of thin-film polycrystalline solar cell capacitance," IEEE Trans. Electron Devices, vol. 37, no. 2, pp. 422-427, Feb. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.2 , pp. 422-427
    • Mauk, P.H.1    Tarakolian, H.2    Sites, J.R.3
  • 7
    • 0035445387 scopus 로고    scopus 로고
    • Measurement of AC parameters of gallium arsenide (GaAs/Ge) solar cell by impedance spectroscopy
    • DOI 10.1109/16.944213, PII S0018938301073324
    • R. Anilkumar, M. S. Suresh, and J. Nagaraju, "Measurement of AC parameters of gallium arsenide (GaAs/Ge) solar cell by impedance spectroscopy," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 2177-2179, Sep. 2001. (Pubitemid 32922902)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.9 , pp. 2177-2179
    • Kumar, R.A.1    Suresh, M.S.2    Nagaraju, J.3
  • 8
    • 77955292009 scopus 로고    scopus 로고
    • Infrared radiative properties of heavily doped silicon at room temperature
    • Feb.
    • S. Basu, B. J. Lee, and Z. M. Zhang, "Infrared radiative properties of heavily doped silicon at room temperature," Trans. ASME, J. Heat Transf., vol. 132, no. 2, p. 023301, Feb. 2010.
    • (2010) Trans. ASME, J. Heat Transf. , vol.132 , Issue.2 , pp. 023301
    • Basu, S.1    Lee, B.J.2    Zhang, Z.M.3
  • 9
    • 77957851392 scopus 로고    scopus 로고
    • A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell
    • Austin, TX, May 3-6
    • C. R. Jeevandoss, M. Kumaravel, and V. J. Kumar, "A novel method for the measurement of the C-V characteristic of a solar photovoltaic cell," in Proc. IEEE I2MTC, Austin, TX, May 3-6, 2010, pp. 371-374.
    • (2010) Proc. IEEE I2MTC , pp. 371-374
    • Jeevandoss, C.R.1    Kumaravel, M.2    Kumar, V.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.