In situ optimization of co-implantation and substrate temperature conditions for nitrogen-vacancy center formation in single-crystal diamonds

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Schwartz, J ^a   Michaelides, P ^a   Weis, C D ^a   Schenkel, T ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IONS; CO-IMPLANTATION; DIAMOND SAMPLES; DYNAMIC ANNEALING; IN-SITU; IN-SITU ANNEALING; IN-SITU CHARACTERIZATION; LOW ENERGIES; NITROGEN IONS; NITROGEN VACANCIES; NITROGEN-VACANCY CENTER; ROOM TEMPERATURE; SINGLE CRYSTAL DIAMOND; SUBSTRATE TEMPERATURE;

HELIUM; NITROGEN;

DIAMONDS;

EID: 79953782110     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/3/035022     Document Type: Article

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