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Volumn , Issue , 2011, Pages

Dynamic paralleling problems in IGBT module construction and application

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE APPLICATION; HIGH CURRENTS; HVDC CONVERTERS; IGBT DEVICES; TRACTION MOTOR DRIVES;

EID: 79953762805     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (20)

References (16)
  • 1
    • 0036045176 scopus 로고    scopus 로고
    • Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation
    • P. Spirito et al.: Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation. ISPSD 2002 pp 269 - 272.
    • (2002) ISPSD , pp. 269-272
    • Spirito, P.1
  • 2
    • 79953733741 scopus 로고    scopus 로고
    • Thermal runaway during blocking
    • R. Schnell et al.: Thermal runaway during blocking. ABB Application Note 5SYA 2045-01, 2005.
    • (2005) ABB Application Note 5SYA , pp. 2045-2101
    • Schnell, R.1
  • 3
    • 79953762209 scopus 로고    scopus 로고
    • Numerical simulation for electromagnetic power module design
    • Naples
    • Cottet, D. et al.: Numerical Simulation for electromagnetic power module design. CIPS, Naples, 6-37, 2006.
    • (2006) CIPS , pp. 6-37
    • Cottet, D.1
  • 5
    • 79953733373 scopus 로고    scopus 로고
    • Homepage
    • Homepage www.comsol.com.
  • 7
    • 0031333122 scopus 로고    scopus 로고
    • IGBT negative gate capacitance and related instability effects
    • PII S0741310697081019
    • Omura I. et al.; IGBT negative gate capacitance and related instability effects. Electron Device Letters, IEEE Volume 18, Issue 12, Dec 1997 Page(s):622 - 624. (Pubitemid 127557087)
    • (1997) IEEE Electron Device Letters , vol.18 , Issue.12 , pp. 622-624
    • Omura, I.1    Ohashi, H.2    Fichtner, W.3
  • 8
    • 79953759861 scopus 로고    scopus 로고
    • 1200 V IGBT operating at 200°C? An investigation on the potential and design constraints
    • Jeju, O2-3
    • U. Schlapbach et al.: 1200 V IGBT operating at 200°C? An investigation on the potential and design constraints. Proc. ISPSD 2007, Jeju, O2-3.
    • (2007) Proc. ISPSD
    • Schlapbach, U.1
  • 10
    • 79953736432 scopus 로고    scopus 로고
    • Switching-self-clamping- mode " SSCM " for over-voltage protection in high voltage IGBT applications
    • Nürnberg, S5A-3
    • U. Schlapbach et al.: Switching-Self-Clamping- Mode "SSCM" for Over-voltage Protection in High Voltage IGBT Applications. Proc. PCIM 2005, Nürnberg, S5A-3.
    • (2005) Proc. PCIM
    • Schlapbach, U.1
  • 11
    • 34247480577 scopus 로고    scopus 로고
    • A landmark in electrical performance of IGBT modules utilizing next generation chip technologies
    • Naples
    • A. Kopta et al.: A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies. Proc ISPSD 2006, Naples, pp 54 - 57.
    • (2006) Proc ISPSD , pp. 54-57
    • Kopta, A.1
  • 12
    • 84907525090 scopus 로고    scopus 로고
    • Explanation of IGBT tail current oscillations by a novel "plasma extraction transit time" mechanism
    • B. Gutsmann et al.: Explanation of IGBT Tail Current Oscillations by a Novel "Plasma Extraction Transit Time" Mechanism. Solic-State Device Research Conference, 2001 pp 255 - 258.
    • (2001) Solic-State Device Research Conference , pp. 255-258
    • Gutsmann, B.1
  • 15
    • 79953733372 scopus 로고    scopus 로고
    • Parallel operation of LoPak modules
    • Nürnberg, PC 12.3
    • R. Schnell et al.: Parallel Operation of LoPak Modules. Proc. PCIM 2003, Nürnberg, PC 12.3. pp 295- 302.
    • (2003) Proc. PCIM , pp. 295-302
    • Schnell, R.1
  • 16
    • 79953764114 scopus 로고    scopus 로고
    • Homepage
    • Homepage www.bussmann.com.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.