Hole injection enhancement by a WO3 interlayer in inverted organic light-emitting diodes and their interfacial electronic structures

Journal of Physical Chemistry C

Volumn 115, Issue 14, 2011, Pages 6599-6604

  Kim, Yoon Hak ^a,b   Kwon, Soonnam ^c   Lee, Jong Hoon ^a   Park, Soon Mi ^a   Lee, Young Mi ^a   Kim, Jeong Won ^a,b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-METAL; CHARGE GENERATION; CURRENT EFFICIENCY; ENERGY LEVEL ALIGNMENT; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE INJECTION BARRIERS; HOLE INJECTION LAYERS; IN-SITU; INTERFACIAL CHEMICAL REACTIONS; INTERFACIAL ELECTRONIC STRUCTURE; ORDERS OF MAGNITUDE;

ALUMINUM; CHARGE INJECTION; ELECTROLUMINESCENCE; ELECTRON INJECTION; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; ELECTRONIC STRUCTURE; FERMI LEVEL; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR ORBITALS; PHASE INTERFACES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79953752228     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp111128k     Document Type: Article

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