Optimization of the p-GaN window layer for InGaN/GaN solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2089-2092

  Neufeld, Carl J ^a   Chen, Zhen ^a   Cruz, Samantha C ^a   Toledo, Nikholas G ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; INGAN/GAN; OPTIMIZED DEVICES; PEAK OUTPUT POWER; REVERSE BIAS; SHORT WAVELENGTHS; SURFACE PIT DENSITIES; THREE ORDERS OF MAGNITUDE; WINDOW LAYER;

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTIMIZATION; PHOTOVOLTAIC EFFECTS; SOLAR CELLS;

GROWTH TEMPERATURE;

EID: 78650111921     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616061     Document Type: Conference Paper

References (8)

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