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Volumn 98, Issue 13, 2011, Pages

Nondestructive estimation of depletion layer profile in Nb-doped SrTiO 3 / (La,Ba) MnO3 heterojunction diode structure by hard x-ray photoemission spectroscopy

(8) Tanaka, Hidekazu a Satoh, Issei a,d Kanki, Teruo a Ikenaga, Eiji b Kobata, Masaaki b Kim, Jung Jin b,e Ueda, Shigenori c Kobayashi, Keisuke c

a OSAKA UNIVERSITY (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

c NIMS/SPring 8 ^* (Japan)

d Sumitomo Electric Industry Ltd (United States)

e SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORE LEVEL PHOTOEMISSION SPECTROSCOPY; DEPLETION LAYER; DIODE STRUCTURE; HARD X RAY; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; HETEROJUNCTION DIODES; LARGE SHIFTS; NB-DOPED SRTIO; NON DESTRUCTIVE; SEMICONDUCTOR THEORY;

BARIUM; BINDING ENERGY; HETEROJUNCTIONS; LANTHANUM; LUMINESCENCE OF ORGANIC SOLIDS; MANGANESE OXIDE; PHOTOEMISSION; SEMICONDUCTOR DIODES; STRONTIUM ALLOYS;

EMISSION SPECTROSCOPY;

EID: 79953747068 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3571454 Document Type: Article

Times cited : (15)

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