|
Volumn 311, Issue 7, 2009, Pages 1897-1900
|
Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors
|
Author keywords
A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Infrared detector; B3. Semiconductor devices
|
Indexed keywords
CRYSTAL GROWTH;
DETECTORS;
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
GROWTH TEMPERATURE;
HOLE MOBILITY;
INFRARED DETECTORS;
MOLECULAR BEAM EPITAXY;
MOLECULAR DYNAMICS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR MATERIALS;
SEMICONDUCTOR QUANTUM WIRES;
SEMICONDUCTOR SWITCHES;
SONOLUMINESCENCE;
A3. MOLECULAR BEAM EPITAXY;
A3. SUPERLATTICES;
B1. ANTIMONIDES;
B3. INFRARED DETECTOR;
B3. SEMICONDUCTOR DEVICES;
MOLECULAR BEAMS;
|
EID: 63349100708
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.09.141 Document Type: Article |
Times cited : (16)
|
References (17)
|