메뉴 건너뛰기




Volumn 311, Issue 7, 2009, Pages 1897-1900

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Infrared detector; B3. Semiconductor devices

Indexed keywords

CRYSTAL GROWTH; DETECTORS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GROWTH TEMPERATURE; HOLE MOBILITY; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES; SONOLUMINESCENCE;

EID: 63349100708     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.141     Document Type: Article
Times cited : (16)

References (17)
  • 8
    • 63349106158 scopus 로고    scopus 로고
    • M. Kinch, in: Proceedings of SPIE, 4454, 2001, p. 168; M. Kinch, in: Proceedings of SPIE, 4288, 2001, p. 254.
    • M. Kinch, in: Proceedings of SPIE, vol. 4454, 2001, p. 168; M. Kinch, in: Proceedings of SPIE, vol. 4288, 2001, p. 254.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.