Dark currents, responsivity, and response time in graded gap HgCdTe structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7660, Issue , 2010, Pages

  Piotrowski, J ^a   Gawron, W ^a   Orman, Z ^a   Pawluczyk, J ^a   Klos K ^a   Stepien D ^a   Piotrowski, A ^a  

^a VIGO SYSTEM S A   (Poland)

Author keywords

gap grading; HgCdTe; MOCVD growth; Uncooled photodetectors

Indexed keywords

EPITAXIAL TECHNIQUES; GAP GRADING; GRADED INTERFACES; HGCDTE; HGCDTE HETEROSTRUCTURES; HIGH FREQUENCY PERFORMANCE; INTER-DIFFUSION; LINEARITY RANGE; MOCVD; MOCVD GROWTH; NEAR ROOM TEMPERATURE; NUMERICAL CALCULATION; RESPONSE TIME; RESPONSIVITY; SHARP INTERFACE; TUNNEL CURRENTS; UNCOOLED PHOTODETECTORS;

CRYSTALS; DOPING (ADDITIVES); HETEROJUNCTIONS; INFRARED RADIATION; MERCURY COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GRADING;

EID: 79953704525     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.850331     Document Type: Conference Paper

References (16)

1. J. Piotrowski and W. Gawron. "Ultimate Performance of Infrared Photodetectors and Figure of Merit of Detector Material", Infrared Physics and Technology 38, 63-68 (1997).
2. J. Piotrowski and A. Rogalski, [High-Operating-Temperature Infrared Photodetectors], SPIE, Bellingham (2007).
3. N.T. Gordon, R.S. Hall, C.L. Jones, C.D. Maxey, N.E. Metcalfe, R.A. Catchpole, and M. White, "MCT infrared detectors with close to radiatively limited performance at 240 K in the 3-5 μ m band", J. Electron. Mater., 29, 818 822 (2000).
4. xTe device structure for higher operating temperature detectors", J. Electron. Mat. 32, 667-671 (2003).
5. J. Piotrowski, "A new method of obtaining CdHgTe thin films", Electr. Technol. 5, 87-89 (1972).
6. R.Jezykowski, T. Persak, J. Piotrowski, "Uncooled photodetectors based on 8-12 μm HgCdTe layers", (in Polish), Biul. WAT, No 5, 105-109 (1972).
7. M. Grudzien and J. Piotrowski, "Monolithic optically immersed HgCdTe IR detectors", Infrared Phys. 29, 251 253 (1989).
8. Piotrowski J., W. Galus and M. Grudzien, "Near room-temperature IR photodetectors", Infrared Phys. 31, 1-48 (1990).
9. J. Piotrowski and M. Razeghi, "Improved performance of IR photodetectors with 3D gap engineering", Proc. SPIE 2397, 180-192 (1995).
10. A. Piotrowski, W. Gawron, K. Klos, J. Pawluczyk, J. Piotrowski, P. Madejczyk and A. Rogalski, "Improvements in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors", Proc. SPIE 5957, 59570J, 1-9 (2005).
11. J. Piotrowski, Z. Djuric, W. Galus, V. Jovic, M. Grudzien, Z. Djinovic, and Z. Nowak, "Composition and thickness control of CdHgTe layers grown by open tube isothermal vapour phase epitaxy", J. Cryst. Growth 83, 122-126 (1987).
12. A. Piotrowski, J. Piotrowski, W. Gawron, J. Pawluczyk, M. Pedzinska, "Extension of spectral range of Peltier cooled photodetectors to 16 μm", Proc. SPIE 7298, 729824 (2009).
13. K. Jóźwikowski, J. Piotrowski, W. Gawron, A. Rogalski, A. Piotrowski, J. Pawluczyk, A. Jóźwikowska, J. Rutkowski, and M. Kopytko, "Generation-recombination effect in high temperature HgCdTe heterostructure non-equilibrium photodiodes", J. Electron. Mater. (2009); DOI: 10.1007/s11664-009-0752-0.
14. M.A. Kinch, [Fundamental of Infrared Detector Materials], SPIE Press, Bellingham (2007).
15. K. Jozwikowski, J. Piotrowski (to be published)
16. A. Piotrowski, K. Klos, W. Gawron, J. Pawluczyk, Z. Orman, J. Piotrowski, "Uncooled or minimally cooled 10μ m photodetectors with subnanosecond response time", Proc. SPIE 6542, 65421B (2007).