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Volumn 38, Issue 8, 2009, Pages 1666-1676

Generation-recombination effect in high-temperature HgCdTe heterostructure nonequilibrium photodiodes

(9) Jozwikowski K a Piotrowski, J b Gawron, W a Rogalski, A a Piotrowski, A b Pawluczyk, J b Jozwikowska A c Rutkowski, J a Kopytko, M a

a MILITARY UNIVERSITY OF TECHNOLOGY (Poland)

b VIGO SYSTEM S A (Poland)

c WARSAW UNIVERSITY OF LIFE SCIENCES (Poland)

Author keywords

HgCdTe heterostructures; HgCdTe nonequilibrium high temperature photodiodes; Misfit dislocations; Trap assisted tunneling

Indexed keywords

CONTACT REGIONS; DISLOCATION CORE; DISLOCATION DENSITIES; FIELD-INDUCED REDUCTION; GENERATION MECHANISM; GENERATION-RECOMBINATION; HETEROJUNCTION PHOTODIODES; HETEROSTRUCTURES; HGCDTE; HGCDTE HETEROSTRUCTURES; HGCDTE NONEQUILIBRIUM HIGH-TEMPERATURE PHOTODIODES; HIGH TEMPERATURE; LONG WAVELENGTH; MISFIT DISLOCATIONS; NON EQUILIBRIUM; REVERSE-BIASED DIODE; ROOM TEMPERATURE; THERMAL GENERATION; TRAP-ASSISTED TUNNELING; TUNNELING CURRENT;

ACTIVATION ENERGY; ELECTRIC POTENTIAL; HETEROJUNCTIONS; MERCURY COMPOUNDS; PHOTODIODES; SINGLE CRYSTALS; TUNNELING (EXCAVATION); WIND TUNNELS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 68749085865 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0752-0 Document Type: Conference Paper

Times cited : (14)

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