Novel HgxCd1-xTe device structure for higher operating temperature detectors

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 667-671

  Ashby, M K ^a   Gordon, N T ^a   Elliott, C T ^a   Jones, C L ^b   Maxey, C D ^b   Hipwood, L ^b   Catchpole, R ^b  

^a QINETIQ   (United Kingdom)

^b BAE SYSTEMS   (United Kingdom)

Author keywords

1 f noise; Breakdown; HgxCd1 xTe; IR detector; Photovoltaic detector

Indexed keywords

MERCURY COMPOUNDS; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SPURIOUS SIGNAL NOISE; TEMPERATURE MEASUREMENT;

TEMPERATURE DETECTORS;

INFRARED DETECTORS;

EID: 0043269237     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0050-1     Document Type: Conference Paper

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