Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer

Optics Express

Volumn 19, Issue 7, 2011, Pages 6609-6615

  Tan, Xiao Hui ^a,b   Ye, Sheng Lin ^b,c   Liu, Xu ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b Optorun Co Ltd   (Japan)

^c UNIVERSITY OF SHANGHAI FOR SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; GALLIUM; THIN FILMS; VAPOR DEPOSITION;

CONTROLLING METHODS; CU(IN , GA)SE; DEVICE PERFORMANCE; POST DEPOSITION TREATMENT; SIMPLE APPROACH; SURFACE BANDS; SURFACE LAYERS; SURFACE MODIFICATION; THIN LAYERS; WIDE BAND GAP;

SEMICONDUCTING SELENIUM COMPOUNDS;

COPPER;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; MATERIALS TESTING; METHODOLOGY; SURFACE PLASMON RESONANCE;

COPPER; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; SURFACE PLASMON RESONANCE;

EID: 79953230149     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.006609     Document Type: Article

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