Novel thermoelectric materials based on boron-doped silicon microchannel plates

Materials Letters

Volumn 65, Issue 11, 2011, Pages 1618-1620

  Ci, Pengliang ^a   Shi, Jing ^a   Wang, Fei ^a   Xu, Shaohui ^a   Yang, Zhenya ^a   Yang, Pingxiong ^a   Wang, Lianwei ^a   Chu, Paul K ^b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Boron doping; Electrical properties; Porous materials; Thermoelectric materials

Indexed keywords

BORON-DOPED SILICON; BORON-DOPING; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; HIGH RESISTIVITY; PEAK VALUES; POWER FACTORS; ROOM TEMPERATURE; SILICON-BASED; THERMOELECTRIC MATERIAL; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES;

BORON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; IMAGE STORAGE TUBES; MICROCHANNELS; POROUS MATERIALS; SEEBECK COEFFICIENT; THERMOELECTRIC EQUIPMENT;

MATERIALS PROPERTIES;

EID: 79953200195     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.03.022     Document Type: Article

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