Thermoelectric performance of silicon nanowires

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Zhang, Gang ^a   Zhang, Qingxin ^a   Bui, Cong Tinh ^b   Lo, Guo Qiang ^a   Li, Baowen ^b,c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELING; COOLING POWER DENSITY; COOLING TEMPERATURE; FINITE ELEMENT SIMULATIONS; HOT SPOT; ON-CHIP TEMPERATURE; PROMISING MATERIALS; SILICON NANOWIRES; THERMOELECTRIC MODULES; THERMOELECTRIC PERFORMANCE;

ELECTRIC WIRE; INTEGRATED CIRCUITS; NANOWIRES; THERMOELECTRICITY;

COOLING;

EID: 66549099874     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3143616     Document Type: Article

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