Pplication of synchrotron-based reciprocal-space mapping at a fixed angular position to identification of crystal symmetry of Bi4Ti 3O12 epitaxial thin films

Journal of Applied Crystallography

Volumn 44, Issue 2, 2011, Pages 385-391

  Sakata, Osami ^a,b   Watanabe, Takayuki ^c   Funakubo, Hiroshi ^c  

^a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

reciprocal space mapping; synchrotron diffraction; thin films

Indexed keywords

ANGULAR POSITIONS; AZIMUTHAL ANGLE; DIFFRACTION SPOTS; EPITAXIAL THIN FILMS; GRAZING INCIDENCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MONOCLINIC STRUCTURES; SPACE MAPPINGS; SYNCHROTRON DIFFRACTION; THICK SAMPLES; TIO; X-RAY EXPOSURE;

BISMUTH; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; MAPPING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SINGLE CRYSTALS; SYNCHROTRONS; VAPOR DEPOSITION;

CRYSTAL SYMMETRY;

EID: 79953056243     PISSN: 00218898     EISSN: 16005767     Source Type: Journal    
DOI: 10.1107/S0021889811003980     Document Type: Article

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