Integration benefits of carborane molecular implant for state-of-the-art 28-nm logic pFET device manufacturing

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 548-550

  Li, C I ^a   Shen, T M ^a   Kuo, P ^a   Liu, R ^a   Chan, M ^a   Yang, C L ^a   Wu, J Y ^a   Colombeau, B ^b   Guo, B N ^b   Thanigaivelan, T ^b   Toh, T ^b   Sun, H L ^b   Wu, T ^b   Lu, S ^b  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

Complementary metaloxidesemiconductor logic devices; ion implantation; process modeling

Indexed keywords

ADVANCED MODELING; CARBORANES; COMPLEMENTARY METALOXIDESEMICONDUCTOR LOGIC DEVICES; MOLECULAR IMPLANTS; PROCESS MODELING;

LOGIC DEVICES;

ION IMPLANTATION;

EID: 79953054363     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2105855     Document Type: Article

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