Room-temperature nonsaturating magnetoresistance of intrinsic bulk silicon in high pulsed magnetic fields

Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

  Wu, L H ^a,b,c   Zhang, X ^a,b   Vanacken, J ^d   Schildermans, N ^d   Wan, C H ^a,b   Moshchalkov, V V ^d  

^a TSINGHUA UNIVERSITY   (China)

^b Beijing National Center for Electron Microscopy   (China)

^c Shanghai Aircraft Design and Research Institute   (China)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CURRENT FLOWS; FORWARD BIAS; HIGH MAGNETIC FIELDS; LINEAR BEHAVIOR; POSITIVE MAGNETORESISTANCE; PULSED MAGNETIC FIELDS; ROOM TEMPERATURE;

MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE;

ELECTRIC RESISTANCE;

EID: 79952961627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569139     Document Type: Article

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